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https://doi.org/10.60893/figshare.aip.29900942

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posted on 2025-09-04, 12:03 authored by Ismaël Charlet, Fanny Morisot, Yveline Gobil, Arnaud Anotta, Frédéric Gaillard, Blandine Duriez, Erwan Morvan

GaN, AlN, AlGaN physical properties

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Related Materials

1.
DOI - Is supplement to Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson-Schrödinger and direct tunneling equations

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Physical sciences

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material properties III-V alloys GaN

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