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posted on 2024-08-01, 12:03 authored by Nathan Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael Walker, Larry Wang, Ming Cheng, Wei Zhao, Michael Scarpulla

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DOI - Is supplement to Utilizing (Al, Ga)2O3/Ga<sub>2</sub>O<sub>3</sub> superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β -Ga<sub>2</sub>O<sub>3</sub>

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Physical sciences

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gallium oxide ultra-wide band gap semiconductor point defects point defect diffusion

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