Supplementary Material

https://doi.org/10.60893/figshare.apl.29483462

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posted on 2025-07-22, 12:04 authored by Joseph Dill, Jonah Shoemaker, Kazuki Nomoto, Jimy Encomendero, Zexuan Zhang, Chuan Chang, Jie-Cheng Chen, Feliciano Giustino, Stephen Goodnick, Debdeep Jena, Huili Xing

The technical details of the Monte Carlo simulations presented in the main text are discussed in this supplementary material.

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Keywords

GaN pFET Polarization doping High field transport Velocity-field GaN CMOS

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