Supplementary Material
media
posted on 2024-12-16, 05:01 authored by Pooja Sharma, Poulomi Chakrabarty, Prabhat Prajapati, Sera Sen, Saurabh LodhaThe supplementary material comprises double-sweep (forward
and reverse) hysteresis data and breakdown characteristics
for single-gate unidirectional MOSFET, gated-TLM measurement
data, dielectric stack breakdown characteristics and
benchmarking plots of conventional unidirectional single-gate MOSFET against other lateral β-Ga2O3, lateral GaN and SiC FETs.
