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Overcoming the Doping Limit in GaAs by Ion Implantation and Pulsed Laser Melting

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posted on 2024-01-25, 13:48 authored by Kin Man Yu, M. A. Scarpulla, Chun Yuen Ho, O. D. Dubon, W. Walukiewicz

Comparison of the maximum carrier concentration in GaAs obtained in this work and by various growth and doping methods for some common dopants reported in the literature.

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    Journal of Applied Physics

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    Keywords

    Semiconductors and electronic materialsDoping LimitsIon implantationPulsed Laser Melting

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    CC BY 4.0

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