Supplemental Information: Influence of heterovalent doping on Ntetra formation in GaAsN alloys

https://doi.org/10.60893/figshare.apl.30391390

journal contribution

posted on 2025-11-17, 05:03 authored by Joshua Cooper, Matteo Carcassi, Zhucong Xi, Dashal Womack, Hailey McKenna, Liang Qi, Rachel Goldman

Descriptions, analysis, and figures for binding energy of BeGa-Ntetra, Si and Be doping calibration, and ion channeling spectra.

History

Related Materials

1.
DOI - Is supplement to Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys

Usage metrics

Categories

Keywords

dilute nitride nitrogen incorporation molecular beam epitaxy GaAs1-xNx channeling ion beam analysis

Licence

Exports