Supplement 1

journal contribution

posted on 2025-09-11, 12:03 authored by Rahul Rai, Khanh Nguyen, Hung Tran, Viet Ho, Chee How Lu, Jui Wu, You-Chen Weng, Baquer Mazhari, Edward Chang

Detail about device fabrication and FEG stack deposition

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Related Materials

1.
DOI - Is supplement to <strong>Negative Bias Threshold Voltage Instability and Gate Reliability in GaN Tri-Gate HEMTs with Ferroelectric Charge-Trap Gate Stack</strong>

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Engineering

Keywords

GaN HEMTs Compound Semiconductors

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