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Dual Operation Modes of the Ge Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor - Supplementary Material

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posted on 2024-06-03, 04:00 authored by David Lidsky, Christopher Allemang, Troy Hutchins-Delgado, Anthony James, Portia Allen, Maziar Saleh Ziabari, Peter Sharma, Adelaide Bradicich, Winson Chun-Hsin Kuo, Stephen House, Tzu-Ming Lu
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    Applied Physics Letters

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