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posted on 2025-08-19, 12:04 authored by Zhuanli Ma, Ke Wei, Hongling Xiao, sheng zhang, Xiaojuan chen, Jiaqi Guo, Jianchao Wang, Kaiyu Wang, Xiaoqiang He, Xinguo Gao, Yingkui Zheng, Xinhua Wang, Sen Huang, Xinyu Liu
More experimental details and data on the self-limiting nature of the ALE process applied to ScAlN, including the saturation trends observed in the Cl₂ and Ar plasma half-cycles, are provided in the supplementary material.

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    DOI - Is supplement to <strong>Pulsed mode Atomic Layer Etching of ScAlN using Cl<sub>2</sub>/C<sub>2</sub>H<sub>4</sub>/Ar</strong>

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    Applied Physics Letters

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    Atomic layer etching (ALE)ScAlNSurface roughnessEtching products

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