revised supporting information

Fig. S1. (a) XPS instrument camera view of the analysis location, (b) analysis area with 40 μm/20 μm of WCH/LCH within the mask layout, and (c) the variations in atomic ratios (Al, Ga, In, O, and Zn) with the etch time. Fig. S2. Variations in atomic ratios of constituent elements as a function of etch time for the gate-stack structures (Al2O3 PL/IGZO/Al2O3 GI) of (a) Dev-A and (b) Dev-B, which were obtained from the device-level XPS measurement.