The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC
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posted on 2024-07-25, 12:05 authored by Yanwei Yang, Keqiang Li, Zhouyu Tong, Xiaodong Pi, Deren Yang, Yuanchao HuangPlease see the supplementary material for details on the transformation of 4H-SiC crystal structure, the shear stress-strain curve along different slip directions and the phenomenon of dislocation movement. Besides, stress-strain curves at different strain rates at 2273K were compared. The partial enlarged view of dislocation cores was showed.
