Synchrotron-based X-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
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posted on 2024-07-17, 12:05 authored by Anusmita Chakravorty, Alexandre Boulle, Aurelien Debelle, Gouranga Manna, Pinku Saha, Dinakar Kanjilal, Debdulal KabirajFigures to support the calculations and simulations presented in the main manuscript have been provided in this supplementary file.
