Skip to main content
Browse
Browse and Search
Search
Supporting information: Comprehensive Study of β-Ga2O3 Epitaxial Growth Using a Variable Closed-Coupled Showerhead MOCVD Reactor
Cite
Download
(263.35 kB)
Share
Embed
figure
posted on 2025-05-13, 12:04
authored by
Aadil Waseem
,
Gavin Latham
,
Clifford McAleese
,
Salwan Omar
,
Indraneel Sanyal
,
Daniel Dryden
,
Andrew Pakes
,
Xiuling Li
Doping calibration structures of Si- and Mg-doped β-Ga₂O₃ films.
History
Usage metrics
0
0
0
Categories
Engineering
Keywords
MOCVD, Ga2O3
Ultrawide bandgap semiconductor
Epitaxy
High power electronics
Licence
CC BY-NC 4.0
Exports
Select an option
RefWorks
RefWorks
BibTeX
BibTeX
Ref. manager
Ref. manager
Endnote
Endnote
DataCite
DataCite
NLM
NLM
DC
DC