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Supporting information: Comprehensive Study of β-Ga2O3 Epitaxial Growth Using a Variable Closed-Coupled Showerhead MOCVD Reactor

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posted on 2025-05-13, 12:04 authored by Aadil Waseem, Gavin Latham, Clifford McAleese, Salwan Omar, Indraneel Sanyal, Daniel Dryden, Andrew Pakes, Xiuling Li
Doping calibration structures of Si- and Mg-doped β-Ga₂O₃ films.

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