posted on 2024-10-07, 04:00authored byjunyi Hu, Xiyao Song, Yueyi He, Haoran Wang, Shaoyao Liu, Yunpeng Wang, Yi Fan, Fei Wang
Figure S1. SEM image of BHJ films spin-coated onto the ITO substrate. Figure S2. Elemental composition analysis of the BHJ film on ITO substrate with an inset of its SEM image. Figure S3. Ultraviolet photoelectron spectroscopy (UPS) spectra for the neat P3HT film and blend films.Figure S4 Spectral absorption of films with different donor-acceptor ratios. Figure S5. The corresponding I-V characteristics in a linear coordinate of the device. Figure S6. (a) The I-V characteristics in a log coordinate of the photodetector based on blend films. (b-d) The I-V characteristics in a linear coordinate of the neat P3HT film, PC61BM film and blend films, respectively. All devices are fabricated with Au/organic semiconductor/Au(MSM)structure on SiO2 substrate under dark. Figure S7. (a) Dark current of the device (b) Dark current of the device prepared after two months. Figure S8. The photocurrent on/off switching of the device for multiple cycles for 50 ms under 3000 Hz high-frequency.