figure
posted on 2025-11-10, 05:01 authored by Kun Han, Wenbo Li, Minmin Xie, Shengwei Zeng, Yuting Bai, Zhuolun Jiang, Liqiang Xu, Penghui Yin, Pingfan Chen, Zhen Huang, Ariando AriandoSee the supplementary material for experimental section; the electrical transport characterization of LAO/STO EDLT; device architecture and EDLT design for electrical transport studies; temperature dependence of sheet resistance for cool-down and warm-up processes; and gate-voltage modulation of the TCR across distinct thermal ranges.
