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posted on 2025-03-04, 13:04 authored by Takahiro Nagata, Asahiko Matsuda, takashi teramoto, Dominic Gerlach, Peng Shen, Shigenori Ueda, Takako Kimura, Christian DUSSARRAT, Toyohiro Chikyow
Additional HAXPES and SXPES results, and their summary

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    DOI - Is supplement to <strong>Effects of Nitrosyl Fluoride Based Gas Treatment on Fluorination and Redox Reaction at GaN Surface and Pt/GaN Interface</strong>

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    Journal of Applied Physics

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    FluorinationNitrosyl fluorideGallium nitrideHard X-ray photoelectron spectroscopy

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