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Supporting Information

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posted on 2024-06-10, 04:00 authored by Mingyu Chen, Shiming Huang, Wei Jiang, Qipeng Wu, Peng Tan, Chenhao Zhang, Deyi Fu, Xu Li, Zhiming Wu, Yaping Wu, Rong Zhang, Junyong Kang
The Supporting Information including the experimental methods, the AMR measurements of Co electrodes, the AFM characterizations of the GaN and AlN surfaces, the RA products of the Au/Co/Al2O3 and Au/Co/AlN tunnel junctions, determination of the effective channel thickness t, discussion on the intensities of the Hanle signals, investigation of spin selectivity of AlN by first-principle calculations, the dependence of spin polarization on bias, the comparison of local three-terminal and non-local four-terminal results, and the spin relaxation and scattering influenced by DP and EY mechanisms.

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