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posted on 2025-07-08, 12:05 authored by Haris Abbasi, Hadeel Alamoudi, Tien Ng, Vijay Kumar Gudelli, Ranveer Singh, Jiarui Gong, Jie Zhou, Yi Lu, Yang Liu, Dong Liu, Shuoyang Qiu, Boon S. Ooi, Iman S. Roqan, Zhenqiang Ma
Detailed discussion on SRV and DFT calculations

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  1. 1.
    DOI - Is supplement to <strong>Investigation of Ultrathin Surface Passivation Layers for GaN: A Comparative Analysis of Al<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub>, and SiN<sub>x</sub> in Reducing Surface Recombination</strong>

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    Applied Physics Letters

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    Keywords

    Ultrathin passivation layersSurface recombination velocity (SRV)Atomic layer deposition (ALD)GaN heterojunctions

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    CC BY 4.0

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