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Supplementary material for "Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect"
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posted on 2024-10-03, 12:04
authored by
Yunfeng Wu
,
Houwei Pang
,
Yuan Wang
,
Sichen Lin
,
Lei Wang
,
Deren Yang
,
Dongsheng Li
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Physical sciences
Keywords
erbium-doped SnO2 film
energy transfer
photoluminescence
electroluminescence
silicon-based light-emitting device.
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CC BY-NC 4.0
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