Supplementary material

experimental details; atomic force microscopy image; non-resonant Raman spectrum of MoS2; IPC calculation method; device dimension dependence on calculation performance; carrier density of MoS2; ID-VD characteristics and VD dependence on calculation performance; effects of humidity and temperature on device performance; discussion on significant improvement in accuracy by inclusion of Raman signals; scalability and stability of the device; limiting factors of the present device; purpose of employing virtual nodes; Ctot required for a practical device