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posted on 2025-10-16, 12:07 authored by Fang Liu, Tao Wang, Huan He, Tan Shi, Yurong Bai, Pingan Zhou, Chuanhao Chen, Chaohui He, Hang Zang

The migration pathway of Ci and the defect formation energy as a function of Fermi level

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DOI - Is supplement to <strong>Origin of Random Telegraph Noise in Silicon-Based Devices: Insights from First-Principles Study</strong>

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Physical sciences

Keywords

random telegraph noise density functional theory Charge state transition levels

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