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posted on 2024-10-07, 04:00 authored by Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

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DOI - Is supplement to Comparing post deposition and post metallization annealing treatments on Al<sub>2</sub>O<sub>3</sub>/GaN capacitors for different metal gates

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Physical sciences

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Al2O3 Atomic Layer Deposition (ALD)GaN Annealing

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