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posted on 2025-07-23, 12:07 authored by Guillermo Salcedo, Michael Harrington, Stefan Nikodemski, Vladimir Vasilyev, Michael Newburger, Timothy Wolfe, Christine Schubert Kabban, James Sattler, Ahmad Islam
Supplementary information containing figures XRD, SEM, FE characteristics, and statistical analysis of the data in the manuscript

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    DOI - Is supplement to <strong>A Statistical Study on the Origin of the Polarization-Dependent Leakage in Ferroelectric Aluminum Scandium Nitride Films</strong>

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    Journal of Applied Physics

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    ferroelectric, high-temperature, AlScN, memory, microelectronics

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