A step-by-step procedure for the fabrication of photodiodes is provided in Fig. S1 of the supplementary material. Fig S.2a and S.2b are the dark I-V and semi-log(I)-V characteristics of three ethanol nanorod based devices that were prepared by varying F8BT amount, showing 20 μl F8BT and 20 μl PEDOT:PSS used in this work, is the optimum amount for these devices. Fig S.3a and S3.b are the dark I-V and semi-log(I)-V characteristics of two sets of four photodiodes. In this study we used the best of two sets of devices in terms of dark I-V characteristics to further evaluate their I-t characteristics.