Supplementary No.1
figure
posted on 2024-07-22, 04:01 authored by Xiaoyu Yan, Pengfei Zhai, Chen Yang, Shiwei Zhao, Shuai Nan, Peipei Hu, Teng Zhang, Qiyu Chen, Lijun Xu, Zongzhen Li, Jie Liuthe supplementary material for a detailed LET variation in the device, the ion fluence calibrated by solid-state nuclear track detector, the reverse resistance measurement of the SiC JBS diode after SEB at 450 V under the LET of 84.7 MeV·cm2·mg-1, the five additional radiation damage sites in the same DUT, the high-resolution TEM images of the amorphous hillock, and HAADF-STEM and EELS analysis of pristine sample.
