Supplementary Material for "Investigation of Ferro-resistive Switching Mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W Ferroelectric Tunnel Junctions wih Interface Layer Effect

The process flow of the TiN/HZO/WOx/W device (Figure S1), one-point DC read measurement (Figure S2), the pulse sequences of the polarization switching kinetics measurement (Figure S3), the entire simulation framework and the transfer matrix method for the Simmons tunneling calculations (Figure S4), the simulated polarization switching responses (Figure S5), the dynamic voltage and charge responses in 1-D MFDM simulation (Figure S6), the current density depending on the cell area and the temperature (Figure S7), the device structure and the simulated results for the top-W/HZO/bottom-TiN device (Figure S8), the utilized parameters in the dynamic and static simulations for the TiN/HZO/WOx/W device (Table SI), the utilized parameters in the dynamic and static simulations for the top-W/HZO/bottom-TiN device (Table SII), and the utilized parameters in the M1FM2 screening model for the TiN/HZO/WOx/W device (Table SIII).