Supplementary Material for C in GaN as a NR recombination center

S1: Calculation details of trap-assisted Auger-Meitner recombination coefficient; S2: Derivation of the total recombination rate; S3: Details of first-principles calculations and formation energy; S4: Configuration Coordinate Diagram and Calculated Franck-Condon energies and Huang-Rhys factors; S5: Comparison of calculated capture coefficients with experiment; S6: Trap concentrations as a function of carrier density.