Supplementary Material: Controlling thermoelectric properties of epitaxial GeSn film/Si by tuning strain and composition
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posted on 2025-06-09, 04:01 authored by Arata Shibagaki, Ryosuke Hotta, Takafumi Ishibe, Yuichiro Yamashita, Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura1. RHEED patterns of Ge buffer layers. 2. Thickness of doped Ge1-xSnx layer. 3. The influence of undoped Ge1-xSnx and Ge buffer layers on electrical properties. 4. Detail of thermal conductivity measurement. 5. Structural analysis for Ge1-xSnx films after activation anneal. 6. Thermoelectric properties of unstrained Ge0.76Sn0.24/H-Ge samples. 7. Influence of dopant species on the carrier mobility. 8. Optical measurement of unstrained Ge0.95Sn0.05/H-Ge and strained Ge0.88Sn0.12/D-Ge. 9. Theoretical calculation of Seebeck coefficient. 10. The influence of Sn precipitation on thermoelectric properties.
