Supplementary Material Computationally guided experimental validation of divacancy defect formation in 4H-SiC

https://doi.org/10.60893/figshare.apl.28765925

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posted on 2025-04-23, 12:01 authored by Taishi Kimura, Jonghoon Ahn, Nazar Delegan, Alan Dibos, Jiefei Zhang, Benjamin Pingault, Cunzhi Zhang, Giulia Galli, David Awschalom, F. Joseph Heremans

The supplementary material includes the SIMS analysis results and the comparison of the PL spectra after annealing at 1273 K for 2 hours with and without electron irradiation.

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DOI - Is supplement to <strong>Computationally guided experimental validation of divacancy defect formation in 4H-SiC</strong><sup></sup>

Supplementary Material Computationally guided experimental validation of divacancy defect formation in 4H-SiC

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