Supplementary Material (Applied Physics Letters) Write error reduction in magnetic tunnel junctions for voltage controlled magnetoresistive random access memory by using exchange coupled free layer
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posted on 2025-01-13, 05:02 authored by Lui Sakai, Yutaka Higo, Masanori Hosomi, Rie Matsumoto, Takayuki Nozaki, Shinji Yuasa, Hiroshi ImamuraSnapshots of the trajectory of magnetization in both the precession layer (red) and the anchor layer (blue) during the application of the voltage pulse.
