Supplementary Material
figure
posted on 2025-10-14, 12:01 authored by Kaiyi Li, Saifei Dai, Yajing Ding, Xianzhou Shao, Tao Hu, Xinpei Jia, Fengbin Tian, Xiaoqing Sun, Junshuai Chai, Hao Xu, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Yethe supplementary material is for the process flow of different devices, pulses of electrical measurement for different devices, the Cg-Vg curves and QMCV fitting curves, the same EIL parameters, the ΔVth with increasing tpw and different Vp, PGM/ERS Vth evolution during cycling under the condition of the same Vg and the same EIL of each device, and the gate leakage with increasing cycles.
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