Supplementary Material

Strain-free and strained band structures of MoGe2N4 monolayer, band structures of MoGe2N4 bilayer at biaxial tensile strain of 2%, 4%, and 6%, xz-plane averaged electrostatic potential and the ferroelectric switching pathway for the AB- and BA-stacked 8% strained MoGe2N4 bilayer, I-V curves and the TER ratios under bias voltages of the FTJ devices at room temperature, evolution of transmission spectra of the FTJ devices under bias voltages, TER value at zero bias voltage as a function of the channel length, transmission spectra and PLDOS of the FTJ devices at the zero bias voltage for longer channel lengths, and layer-projected band structures of P↑-polarized MoGe2N4 bilayer under a 2% biaxial tensile strain with different electron doping concentrations.