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posted on 2025-09-08, 04:02 authored by Junzhou Chen, Boxun Zhang, Wenqing Guo, Wendi Huang, Xinjian Pan, Yi Cai, Ping Liu, Shixiang Xu, Qingguo Gao
See the supplementary material for the influence of AlOx tunneling-layer thickness on the performance of InSnO TC-TFTs and the impact of sputter O2 partial pressure on their Schottky barrier heights.

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    DOI - Is supplement to <strong>High-performance InSnO tunneling contact transistors </strong><strong>via oxygen partial pressure modulation</strong>

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    Applied Physics Letters

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    Tunneling layerSchottky barrier heightOxygen partial pressure

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