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posted on 2025-07-01, 12:12 authored by De Dai, Zi Chun Liu, Han Yang, Hui Xia Yang, Yu Hang Zheng, Yang Hui Xia, Yuan Xiao Ma, Yeliang Wang
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    DOI - Is supplement to <strong>Demonstration of Enhancement-Mode High-k Gated Field-Effect Transistors with a Novel Ultrawide Bandgap Semiconductor: Germanium Oxide</strong>

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    e-mode Sn-doped GeO2 FETshigh-k gate dielectricRT-physical vapor deposition

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