AIP Publishing
Browse

Supplementary_Material

Download (303.97 kB)
figure
posted on 2025-04-24, 12:05 authored by Richa Agrawal, Nathan Marchack, Devi Koty, Hien Nguyen, Qingyun Yang, Rosa Goss, Steve Molis, M.J.P. Hopstaken, B.N. To, Roger Goss, Jose Daboin, Jeffrey Shearer, Robert Bruce
Additional figures showing the effect of BCl3 addition and C4F8 substitution with C4F6; XPS atomic % for the uncovered samples; exemplary SEM images of non-annular TSVs.

History

Usage metrics

    JVST A: Vacuum, Surfaces, and Films

    Categories

    Keywords

    Deep reactive ion etch (DRIE)sustainability, through silicon via (TSV)non-Bosch process

    Licence

    CC BY-NC 4.0

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC