Supplementary Material

This supplementary material accompanies the manuscript titled "Evaluation of bias-dependent band structure changes in metal-oxide-semiconductor structures with varying doping concentrations using laboratory hard x-ray photoelectron spectroscopy". It includes detailed descriptions of the experimental setup, Lab. HAXPES system schematics, grounding configurations, and measurement conditions. Additionally, the material provides extended data, such as photoelectron spectra under various biases, fitting parameters for Si 1s and Au 4f peaks, and comparisons with other analytical techniques, offering a comprehensive view of the methods and results discussed in the main text.