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posted on 2025-02-06, 13:00 authored by Tomoya Okuda, Shunsuke Ota, Takahiko Kawahara, Kozo Makiyama, Ken Nakata, Takuya Maeda, Atsushi Kobayashi

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DOI - Is supplement to Sputter epitaxy of ScAlN films on GaN high-electron-mobility transistor structures

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Physical sciences

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crystal growth electron devices

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