Supplementary Material
figure
posted on 2024-12-10, 13:01 authored by Cameron Gorsak, Henry Bowman, Katie Gann, Joshua Buontempo, Kathleen Smith, Pushpanshu Tripathi, Jacob Steele, Debdeep Jena, Darrell Schlom, Huili Xing, M. Thompson, Hari NairThe supplementary material includes the MOCVD growth conditions for the films etched in this study. Also shown is the XRD used for etch rate determination. AFM is included of as-grown and regrown homoepitaxial films as well as AFM of an as-grown and etched heteroepitaxial film.
