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posted on 2024-09-03, 04:03 authored by Yuanyuan Zhang, Yifei Hao, Le Zhang, Kun Wang, Xia Hong
1. Sample Growth and Device Fabrication 2. I vs. V_bias for Junction J2 at Room Temperature 3. R vs. T for Sr3Ir2O7 Electrode

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    Applied Physics Letters

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    Keywords

    Ferroelectric tunnel junctionEpitaxial oxide heterostructureMott insulator

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    CC BY 4.0

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