Supplementary Information - Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

The supplementary material includes: Figure S1 - RSM of single layer AlScN with various Sc compositions, XRD, AFM and RSM of the ten and twenty period samples. Figure S2 - RHEED pattern of the AlScN layers during growth of the ten period sample. Figure S3 - XRD rocking curve (RC) scans comparing the AlScN (0002) and (10-15) peaks to the GaN (0002) and (10-15) peaks, respectively. Figure S4 - ADF-STEM image showing the dislocations present in ten period 12% Sc AlScN/GaN film. Figure S5 - ADF-STEM image and lattice parameter analysis in AlScN/GaN multilayer heterostructure. Figure S6 - RBS yield vs. backscattered energy spectra of AlScN/GaN films.