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posted on 2025-10-13, 04:04 authored by Weijie Liao, Da-Wei Deng, Jifeng Luo, Li-Xiu Ran, Nicola Seriani, Zhenkun Tang, Wen-Jin Yin, Ralph Gebauer
See the Supplementary Material for details on the computational methods, stability tests, projected band structures of the Ga-Se(P↑)-AC2 heterostructures under PBE and HSE06 levels, the energy barrier for polarization switching from P↑ to P↓ in In2Se3 within the GaAs/In2Se3 heterostructure, and an explanation of the NDR mechanism.

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    DOI - Is supplement to <strong>Ultrahigh TER Ratios and Non-volatile Behavior in Dual-polarized GaAs/In<sub>2</sub>Se<sub>3</sub> Heterostructures: A First-Principles Study</strong>

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    Applied Physics Letters

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    computational methodspolarization switchingenergy transition barrier

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