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posted on 2025-06-03, 12:05 authored by Boyu Wang, William J. Mitchell, Chulong Wang, Robert Hamwey, Kamruzzaman Khan, Stacia Keller, Umesh Mishra

Additional sample AFM scans, TLM measurements on Sample D5, and Hall measurement results for samples.

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DOI - Is supplement to N-polar Gallium Nitride Doping by Atomic Layer Deposition for Improved Electrical Performance

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atomic layer deposition doping gallium nitride Hall measurements nitrogen-polar

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