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Supplementary Information

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posted on 2024-07-01, 04:05 authored by Dmitry Kalanov, Jürgen Gerlach, Carsten Bundesmann, Jens Bauer, Andriy Lotnyk, Holger von Wenckstern, Andre Anders, Yeliz Unutulmazsoy
See the supplementary material for the additional illustration of atomic arrangements supporting the analysis of TEM/SAED data (Figure S1), STEM-HAADF images for thin films grown at Iion = 11 mA and 15 mA (Figure S2), and for the AFM data for Ga2O3 films deposited at different process parameter variations (Figures S3-S7).

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