Supplementary Images for "Thermoelectric Properties and Thermal Transport in Two-Dimensional GaInSe3 and GaInTe3 Monolayers: A First-Principles Study"

AIMD simulations showing the fluctuations of energy as a function of time step, Strain dependent band edge level and Variation of thermoelectric transport parameters with the carrier concentration for both P- and N-type doping in GaInSe3 and GaInTe3 monolayers.