Supplementary Files

Here, we present additional information on this study in a supplementary document to explain some of the details and highlights of the work. The PBS under the same conditions in higher In-Ga ratio of 10:1 and 30:1 can be found in Supplementary Figure 1. Comparison of PBS results of IGO TFTs with various In-Ga ratio. XPS spectrums of IGO films of In-Ga ratio of 10:1 and 30:1. In Supplementary Table Ⅰ, we present the details of the devices benchmarked of PBS performance in typical AOS TFTs. As the comparison of the optimized IGO TFTs PBS threshold voltage shifts with the reported values measured in AOS TFTs. The Supplementary Figure 2 was used to analysis of gate dependent mobility in IGO-TFT. This explains readers' questions about why, when the In-Ga ratio in IGO is high, the migration rate degradation trend becomes more obvious as VG increases. Supplementary Figure 3 independently shows the PES E_V spectra and fitting results for IGO thin films with different In:Ga ratios of 3:1, 5:1 and 7:1. Supplementary Table Ⅱ then lists the fitting parameters used in the process.