Supplementary Figures S1-S17, and Table 1
figure
posted on 2025-07-08, 12:07 authored by Jiahao Song, Yanghe Wang, Linkun Wang, Zhenghao Liu, Yihan Lei, Mingqiang Cheng, Yingli Zhang, Weikun Zhou, Zengxu Xu, Xianglong Li, Muhammad Shahrukh Saleem, Lang Chen, Boyuan Huang, Wei Wang, Changjian LiGrowth rate monitoring (Fig. S1), AFM and XRD characterizations of thin films (Figs. S2 and S3), characterization of the upper and lower interfaces of the device (Fig. S4), Statistical analysis of Ni nanocolumn size (Fig. S5), Set and Reset operations (Fig. S6), LRS and HRS testing (Fig. S7), multiple tunable states achieved by varying voltage pulse amplitudes and durations (Fig. S8), DC I-V measurements for multilevel resistance states (Figs. S9 and S10), schematic of waveforms during LTP/LTD characterization (Fig. S11), details of the metallic Ni reference layer (Figs. S12 and S13), normalization method for EELS spectra (Fig. S14), EELS spectra of O and Ti(Figs. S15 and S16), cyclic stability analysis of the device under different read voltages (Fig. S17), and a detailed list of compared references (Table 1).
