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posted on 2024-07-03, 12:01 authored by Jifang Cao, Bing Chen, Zhijiang Wang, Junru Qu, Jiayi Zhao, Rongzong Shen, Xiao Yu, Zhiping Yu, Fei liu
The band alignment of Si, SiO2, HfO2, TiN, and Pt; TEM, EDS, and endurance characteristics of three kinds of RRAMs; variations of low resistance state resistance of TiN electrode RRAM and CE-RRAM after SET with various ICC.

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