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Supplemental figure S1 and S2

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posted on 2024-09-03, 04:06 authored by Xinci Chen, Xiang Yin, Zicong Li, Lingyu Meng, Xiaoli Han, Zhijun Zhang, Xianmin Zhang
Figure S1. I-V characteristics of ITO/PET substrate under 6 consecutive cycles. Figure S2. I-V characteristics of devices with and without PMMA.

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    Journal of Applied Physics

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    memristors

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