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posted on 2024-10-03, 12:01 authored by Tong Tong, Yuan Gao, Kan Liao, Weisheng LiThe supplementary material for the AFM characterization, Raman spectrum, the leakage current and the detailed device fabrication steps.
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- 1. DOI - Is supplement to Integrated transfer of large-scale gate dielectric/2D material films for low-power devices
