posted on 2024-07-08, 04:02authored byYayu Dai, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Yujiao Luo, Shuming Zhang, Qian Sun, Liangji Wang, Yun Ji, Masao Ikeda, Hui Yang
See the supplementary material for the characterization of threading dislocation density for GaN templates A and B (Fig. S1), the calculation of in-plane and out-of-plane lattice constants for GaN templates A and B (Fig. S2), and the room-temperature PL spectra of samples A, A2 and B (Fig. S3), and in-situ reflectance trace and curvature of the LED wafers during growth for samples A and B (Fig. S4).